منابع مشابه
Low-pressure CVD and Plasma- Enhanced CVD
LPCVD is a process used in the manufacturing of the deposition of thin films on semiconductors usually ranging from a few nanometers to many micrometers. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage. These films include a variety of materials including polysilicon for gate contacts, thick oxides used for isolation, doped oxides for global...
متن کاملProperties and Practical Results of Tungsten Carbide Coating Produced by Low Temperature Cvd Process
In forming tungsten carbide layer by low temperature and vacuum CVD, uniformity of film thickness, adhesion and gloss achieved when the effective zone of coating set is increased to 4450 x 1,100mm is described. Characteristics of tungsten carbide layer are evaluated and compared with other materials. Some practical applications to the mechanical parts of plastic injection molding machines are i...
متن کاملUltra Low Pressure-drop Helium-cooled Porous-tungsten Pfc
A new class of helium-cooled high heat-flux plasma facing heat exchanger (HX) concept is presented. These unique “Foam-In-Tube” HX concepts are composed of a thin tungsten shell integrally bonded to an open-cell tungsten foam core. High heat flux tests show maximum heat loads of 22.4 MW/m using 4 MPa helium at a flow rate of 27 g/s. Based on these impressive performance results, a unique and sc...
متن کاملHigh-Quality Tungsten Films by Hotwire-Assisted CVD/ALD at Low Temperature
There is a growing interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit (ULSIC) manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In our work, we investigate an alternative approach to REALD without plasma, i.e. replacing plasma by a hot (up to 2000 oC) tungsten (W) wire. In this so-call...
متن کاملGrowth of Single-walled Carbon Nanotubes at Low Temperature and Low Pressure Cvd Conditions
Controlling the detailed structures of single-walled carbon nanotubes (SWNTs) is imperative for realizing many SWNT applications, and understanding the SWNT growth mechanism is important to improve the growth techniques. In the present study, we performed SWNT growth by a catalytic chemical vapor deposition (CVD) method in wide temperature and pressure ranges, using a high-vacuum CVD chamber. W...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1995
ISSN: 1155-4339
DOI: 10.1051/jphyscol:19955114